LOW-ENERGY MASS-SEPARATED ION-BEAM DEPOSITION OF MATERIALS

被引：35

作者：

TOKUYAMA, T

YAGI, K

MIYAKE, K

TAMURA, M

NATSUAKI, N

TACHI, S

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

Compendex;

D O I：

10.1016/0029-554X(81)90694-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

SEMICONDUCTING GERMANIUM

引用

页码：241 / 250

页数：10

共 15 条

[1] ION-BEAM DEPOSITION OF THIN FILMS OF DIAMONDLIKE CARBON [J].

AISENBERG, S ;

CHABOT, R .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2953-+

[2] THIN-FILM DEPOSITION USING LOW-ENERGY ION-BEAMS .1. SYSTEM SPECIFICATION AND DESIGN [J].

AMANO, J ;

BRYCE, P ;

LAWSON, RPW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02) :591-595

[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196

[4]

COLLIGON JS, 1976, 1975 P INT C APPL IO, P357

[5] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J].

CULLIS, AG ;

BOOKER, GR .

JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :132-&

[6] REACTION OF FLUORINE-ATOMS WITH SIO2 [J].

FLAMM, DL ;

MOGAB, CJ ;

SKLAVER, ER .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6211-6213

[7] DIRECT COLLECTION OF SOME METAL IONS IN AN ELECTROMAGNETIC ISOTOPE SEPARATOR AND RELATED SURFACE EFFECTS [J].

FONTELL, A ;

ARMINEN, E .

CANADIAN JOURNAL OF PHYSICS, 1969, 47 (21) :2405-&

[8] EPITAXIAL SYNTHESIS OF DIAMOND BY CARBON-ION DEPOSITION AT LOW-ENERGY [J].

FREEMAN, JH ;

TEMPLE, W ;

GARD, GA .

NATURE, 1978, 275 (5681) :634-635

[9] EFFECT OF ION IRRADIATION ON ADHERENCE OF GERMANIUM FILMS [J].

HIRSCH, EH ;

VARGA, IK .

THIN SOLID FILMS, 1978, 52 (03) :445-452

[10] LOW-TEMPERATURE SILICON EPITAXY BY PARTIALLY IONIZED VAPOR-DEPOSITION [J].

ITOH, T ;

NAKAMURA, T ;

MUROMACHI, M ;

SUGIYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) :553-557

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