1-BAND LOW-NOISE AMPLIFIER WITH FIELD-EFFECT TRANSISTOR

被引：0

|

作者：

MUTZIG, JP

机构：

来源：

REVUE TECHNIQUE THOMSON-CSF | 1978年 / 10卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：775 / 793

页数：19

相关论文

共 50 条

[21] The noise change in an amplifier in a nonlinear regime that is based on a field-effect transistor
Algazinov, EK
Bobreshov, AM
Averina, LI
RADIOTEKHNIKA I ELEKTRONIKA, 1996, 41 (11): : 1386 - 1389
[22] A SIMPLE LOW-NOISE LOW-FREQUENCY TRANSISTOR AMPLIFIER
MOLYNEUX, L
OSSELTON, JW
NATURE, 1962, 194 (4823) : 76 - &
[23] A SIMPLE LOW-NOISE LOW-FREQUENCY TRANSISTOR AMPLIFIER
不详
JOURNAL OF SCIENTIFIC & INDUSTRIAL RESEARCH, 1962, A 21 (10): : 494 - &
[24] LOW-NOISE L-BAND AMPLIFIER
SWANSON, DG
IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS, 1977, 13 (04) : 440 - 440
[25] Low-noise photon counting with a radio-frequency quantum-dot field-effect transistor
Kardynal, BE
Shields, AJ
Beattie, NS
Farrer, I
Cooper, K
Ritchie, DA
APPLIED PHYSICS LETTERS, 2004, 84 (03) : 419 - 421
[26] LOW-NOISE GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR PREAMPLIFIERS FOR STOCHASTIC BEAM COOLING SYSTEMS
LESKOVAR, B
LO, CC
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (04) : 2259 - 2261
[27] LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR MADE BY ION-IMPLANTATION
FENG, M
EU, VK
KANBER, H
WATKINS, E
SCHELLENBERG, JM
YAMASAKI, H
APPLIED PHYSICS LETTERS, 1982, 40 (09) : 802 - 804
[28] Low-noise one-port microwave transistor amplifier
Venguer, AP
Medina, JL
Chávez, R
Velázquez, A
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2002, 33 (02) : 100 - 104
[29] DISTINCTIVE FEATURES OF DESIGN OF TRANSISTOR LOW-NOISE AMPLIFIER STAGES
SHOR, KG
TELECOMMUNICATIONS AND RADIO ENGINEER-USSR, 1968, (12): : 85 - &
[30] A LOW-NOISE MICROWAVE TRANSISTOR-AMPLIFIER WITH A MATCHED INPUT
SUNDUCHKOV, KS
GALITSYN, VV
TUZENKO, AP
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1990, 45 (11) : 149 - 152

← 1 2 3 4 5 →