BAND OFFSETS IN GAAS/AMORPHOUS GE AND GAP/AMORPHOUS GE HETEROJUNCTIONS MEASURED BY INTERNAL PHOTOEMISSION

被引：14

作者：

COLUZZA, C ^{[1
]}

LAMA, F ^{[1
]}

FROVA, A ^{[1
]}

PERFETTI, P ^{[1
]}

QUARESIMA, C ^{[1
]}

CAPOZI, M ^{[1
]}

机构：

[1] CNR,IST STRUTTURA MAT,I-00064 FRASCATI,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3304 / 3306

页数：3

共 14 条

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[7] ENERGY-BAND DISCONTINUITIES IN HETEROJUNCTIONS MEASURED BY INTERNAL PHOTOEMISSION [J].

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[8] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J].

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[9]

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[10] ENERGY-BAND DISCONTINUITIES IN A HETEROJUNCTION OF AMORPHOUS HYDROGENATED SI AND CRYSTALLINE SI MEASURED BY INTERNAL PHOTOEMISSION [J].

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APPLIED PHYSICS LETTERS, 1987, 50 (06) :326-328

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