PHOTOEMISSION-STUDY OF A-SI-H/A-SINX-H INTERFACE FORMATION

被引:4
作者
YANG, L
ABELES, B
EBERHARDT, W
SONDERICKER, D
STASIEWSKI, H
FU, Z
机构
[1] BROOKHAVEN NATL LAB,UPTON,NY 11973
[2] ACAD SINICA,DALIAN INST CHEM PHYS,DALIAN,PEOPLES R CHINA
关键词
D O I
10.1016/0022-3093(87)90204-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:851 / 854
页数:4
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