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- [2] DEPENDENCE OF THE GROWTH-RATE OF INAS EPITAXIAL LAYERS ON ASCL3 PRESSURE IN THE INAS-ASCL3-H2 SYSTEM IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (11): : 49 - 52
- [3] DEPOSITION-TEMPERATURE DEPENDENCE OF THE GROWTH-RATE OF INAS LAYERS IN A SYSTEM INAS-ASCL3-H2 IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1984, 27 (05): : 32 - 36
- [5] EPITAXIAL-GROWTH OF CUGAS2 BY METALORGANIC CHEMICAL VAPOR-DEPOSITION JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1107 - L1109
- [7] SELECTIVE EPITAXIAL-GROWTH OF GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (12): : 1666 - 1671