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PROBLEMS RELATED TO THE FORMATION OF LATERAL P-N-JUNCTIONS ON CHANNELED SUBSTRATE (100) GAAS FOR LASERS
被引:65
作者
:
MEIER, HP
论文数:
0
引用数:
0
h-index:
0
MEIER, HP
BROOM, RF
论文数:
0
引用数:
0
h-index:
0
BROOM, RF
EPPERLEIN, PW
论文数:
0
引用数:
0
h-index:
0
EPPERLEIN, PW
VANGIESON, E
论文数:
0
引用数:
0
h-index:
0
VANGIESON, E
HARDER, C
论文数:
0
引用数:
0
h-index:
0
HARDER, C
JACKEL, H
论文数:
0
引用数:
0
h-index:
0
JACKEL, H
WALTER, W
论文数:
0
引用数:
0
h-index:
0
WALTER, W
WEBB, DJ
论文数:
0
引用数:
0
h-index:
0
WEBB, DJ
机构
:
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
1988年
/ 6卷
/ 02期
关键词
:
D O I
:
10.1116/1.584394
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:692 / 695
页数:4
相关论文
共 16 条
[1]
CHEMICAL ETCHING CHARACTERISTICS OF (001)GAAS
[J].
ADACHI, S
论文数:
0
引用数:
0
h-index:
0
ADACHI, S
;
OE, K
论文数:
0
引用数:
0
h-index:
0
OE, K
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(12)
:2427
-2435
[2]
CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE
[J].
BALLINGALL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
BALLINGALL, JM
;
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
WOOD, CEC
.
APPLIED PHYSICS LETTERS,
1982,
41
(10)
:947
-949
[3]
MOLECULAR-BEAM-EPITAXY-GROWN SINGLE-LONGITUDINAL-MODE GAAS-ALGAAS INTERFEROMETRIC LASERS ON STEPPED-CHANNELLED SUBSTRATES
[J].
HONG, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
HONG, JM
;
WERNER, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WERNER, MJ
;
WU, YH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WU, YH
;
WANG, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WANG, S
.
ELECTRONICS LETTERS,
1985,
21
(24)
:1138
-1140
[4]
MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES
[J].
KAPON, E
论文数:
0
引用数:
0
h-index:
0
KAPON, E
;
TAMARGO, MC
论文数:
0
引用数:
0
h-index:
0
TAMARGO, MC
;
HWANG, DM
论文数:
0
引用数:
0
h-index:
0
HWANG, DM
.
APPLIED PHYSICS LETTERS,
1987,
50
(06)
:347
-349
[5]
PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY MOLECULAR-BEAM EPITAXY
[J].
MANNOH, M
论文数:
0
引用数:
0
h-index:
0
MANNOH, M
;
YUASA, T
论文数:
0
引用数:
0
h-index:
0
YUASA, T
;
NARITSUKA, S
论文数:
0
引用数:
0
h-index:
0
NARITSUKA, S
;
SHINOZAKI, K
论文数:
0
引用数:
0
h-index:
0
SHINOZAKI, K
;
ISHII, M
论文数:
0
引用数:
0
h-index:
0
ISHII, M
.
APPLIED PHYSICS LETTERS,
1985,
47
(07)
:728
-731
[6]
LATERAL P-N-JUNCTION FORMATION IN GAAS MOLECULAR-BEAM EPITAXY BY CRYSTAL PLANE DEPENDENT DOPING
[J].
MILLER, DL
论文数:
0
引用数:
0
h-index:
0
MILLER, DL
.
APPLIED PHYSICS LETTERS,
1985,
47
(12)
:1309
-1311
[7]
MILLER DL, 1986, UNPUB 4TH INT C MOL
[8]
EFFECTS OF GAAS/ALAS SUPERLATTICE BUFFER LAYERS ON SELECTIVE AREA REGROWTH FOR GAAS/ALGAAS SELF-ALIGNED STRUCTURE LASERS
[J].
NODA, S
论文数:
0
引用数:
0
h-index:
0
NODA, S
;
FUJIWARA, K
论文数:
0
引用数:
0
h-index:
0
FUJIWARA, K
;
NAKAYAMA, T
论文数:
0
引用数:
0
h-index:
0
NAKAYAMA, T
.
APPLIED PHYSICS LETTERS,
1985,
47
(11)
:1205
-1207
[9]
UNIVERSAL STAIN-ETCHANT FOR INTERFACES IN III-V COMPOUNDS
[J].
OLSEN, GH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
OLSEN, GH
;
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
ETTENBERG, M
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(11)
:5112
-5114
[10]
HIGH-QUALITY MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS SUBSTRATES
[J].
SMITH, JS
论文数:
0
引用数:
0
h-index:
0
SMITH, JS
;
DERRY, PL
论文数:
0
引用数:
0
h-index:
0
DERRY, PL
;
MARGALIT, S
论文数:
0
引用数:
0
h-index:
0
MARGALIT, S
;
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
.
APPLIED PHYSICS LETTERS,
1985,
47
(07)
:712
-715
←
1
2
→
共 16 条
[1]
CHEMICAL ETCHING CHARACTERISTICS OF (001)GAAS
[J].
ADACHI, S
论文数:
0
引用数:
0
h-index:
0
ADACHI, S
;
OE, K
论文数:
0
引用数:
0
h-index:
0
OE, K
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(12)
:2427
-2435
[2]
CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE
[J].
BALLINGALL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
BALLINGALL, JM
;
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
WOOD, CEC
.
APPLIED PHYSICS LETTERS,
1982,
41
(10)
:947
-949
[3]
MOLECULAR-BEAM-EPITAXY-GROWN SINGLE-LONGITUDINAL-MODE GAAS-ALGAAS INTERFEROMETRIC LASERS ON STEPPED-CHANNELLED SUBSTRATES
[J].
HONG, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
HONG, JM
;
WERNER, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WERNER, MJ
;
WU, YH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WU, YH
;
WANG, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WANG, S
.
ELECTRONICS LETTERS,
1985,
21
(24)
:1138
-1140
[4]
MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES
[J].
KAPON, E
论文数:
0
引用数:
0
h-index:
0
KAPON, E
;
TAMARGO, MC
论文数:
0
引用数:
0
h-index:
0
TAMARGO, MC
;
HWANG, DM
论文数:
0
引用数:
0
h-index:
0
HWANG, DM
.
APPLIED PHYSICS LETTERS,
1987,
50
(06)
:347
-349
[5]
PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY MOLECULAR-BEAM EPITAXY
[J].
MANNOH, M
论文数:
0
引用数:
0
h-index:
0
MANNOH, M
;
YUASA, T
论文数:
0
引用数:
0
h-index:
0
YUASA, T
;
NARITSUKA, S
论文数:
0
引用数:
0
h-index:
0
NARITSUKA, S
;
SHINOZAKI, K
论文数:
0
引用数:
0
h-index:
0
SHINOZAKI, K
;
ISHII, M
论文数:
0
引用数:
0
h-index:
0
ISHII, M
.
APPLIED PHYSICS LETTERS,
1985,
47
(07)
:728
-731
[6]
LATERAL P-N-JUNCTION FORMATION IN GAAS MOLECULAR-BEAM EPITAXY BY CRYSTAL PLANE DEPENDENT DOPING
[J].
MILLER, DL
论文数:
0
引用数:
0
h-index:
0
MILLER, DL
.
APPLIED PHYSICS LETTERS,
1985,
47
(12)
:1309
-1311
[7]
MILLER DL, 1986, UNPUB 4TH INT C MOL
[8]
EFFECTS OF GAAS/ALAS SUPERLATTICE BUFFER LAYERS ON SELECTIVE AREA REGROWTH FOR GAAS/ALGAAS SELF-ALIGNED STRUCTURE LASERS
[J].
NODA, S
论文数:
0
引用数:
0
h-index:
0
NODA, S
;
FUJIWARA, K
论文数:
0
引用数:
0
h-index:
0
FUJIWARA, K
;
NAKAYAMA, T
论文数:
0
引用数:
0
h-index:
0
NAKAYAMA, T
.
APPLIED PHYSICS LETTERS,
1985,
47
(11)
:1205
-1207
[9]
UNIVERSAL STAIN-ETCHANT FOR INTERFACES IN III-V COMPOUNDS
[J].
OLSEN, GH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
OLSEN, GH
;
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
ETTENBERG, M
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(11)
:5112
-5114
[10]
HIGH-QUALITY MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS SUBSTRATES
[J].
SMITH, JS
论文数:
0
引用数:
0
h-index:
0
SMITH, JS
;
DERRY, PL
论文数:
0
引用数:
0
h-index:
0
DERRY, PL
;
MARGALIT, S
论文数:
0
引用数:
0
h-index:
0
MARGALIT, S
;
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
.
APPLIED PHYSICS LETTERS,
1985,
47
(07)
:712
-715
←
1
2
→