ANOMALOUS CONDUCTION-BAND DENSITY OF STATES IN ALXGA1-XAS ALLOYS

被引：1

作者：

KIM, Y

KIM, MS

MIN, SK

机构：

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 68卷 / 03期

关键词：

D O I：

10.1016/0038-1098(88)90763-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：295 / 299

页数：5

共 16 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[3]

CASEY HC, 1978, HETEROSTRUCTURE LA A

[4] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[5] CONDUCTION IN ILLUMINATED GAAS/ALXGA1-XAS HETEROSTRUCTURES .1. EXPERIMENT [J].

HURD, CM ;

MCALISTER, SP ;

MCKINNON, WR ;

FALT, CE ;

DAY, DJ ;

MINER, CJ ;

SPRINGTHORPE, AJ .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2244-2249

[6] THE GETTERING EFFECTS OF GA-IN-AL TERNARY MELT BUBBLER ON GROWTH-RATE AND SOLID COMPOSITION OF MOCVD ALGAAS [J].

KIM, MS ;

MIN, S ;

CHUN, JS .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (01) :21-26

[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[8] PRESSURE AND COMPOSITIONAL DEPENDENCES OF THE HALL-COEFFICIENT IN ALXGA1-XAS AND THEIR SIGNIFICANCE [J].

LIFSHITZ, N ;

JAYARAMAN, A ;

LOGAN, RA ;

CARD, HC .

PHYSICAL REVIEW B, 1980, 21 (02) :670-678

[9] LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS [J].

NELSON, RJ .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :351-353

[10] DECAY KINETICS OF PERSISTENT PHOTOCONDUCTIVITY IN SEMICONDUCTORS [J].

QUEISSER, HJ ;

THEODOROU, DE .

PHYSICAL REVIEW B, 1986, 33 (06) :4027-4033

← 1 2 →