CONTINUOUS ROOM-TEMPERATURE LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON SI

被引:1
作者
DEPPE, DG
HOLONYAK, N
NAM, DW
HSIEH, KC
KALISKI, RW
MATYI, RJ
LEE, JW
SHICHIJO, H
EPLER, JE
BURNHAM, RD
CHUNG, HF
PAOLI, TL
机构
[1] UNIV ILLINOIS,ELECT ENGN RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,CENT RES LAB,URBANA,IL 61801
[3] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
关键词
D O I
10.1109/T-ED.1987.23306
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2380 / 2380
页数:1
相关论文
共 2 条
[1]  
DEPPE DG, UNPUB ROOM TEMPERATU
[2]   CONTINUOUS (300 K) PHOTOPUMPED LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON STRAINED-LAYER GAAS ON SI [J].
KALISKI, RW ;
HOLONYAK, N ;
HSIEH, KC ;
NAM, DW ;
LEE, JW ;
SHICHIJO, H ;
BURNHAM, RD ;
EPLER, JE ;
CHUNG, HF .
APPLIED PHYSICS LETTERS, 1987, 50 (13) :836-838