MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES

被引：73
作者：
GOETZBERGER, A
NICOLLIA.FH
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 12期
关键词：
D O I：
10.1063/1.1709189
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4582 / +
页数：1
相关论文
共 8 条
[1]   TUNNELING INTO INTERFACE STATES OF MOS STRUCTURES [J].
DAHLKE, WE .
APPLIED PHYSICS LETTERS, 1967, 10 (10) :261-&
[2]   TEMPERATURE DEPENDENCE OF INVERSION-LAYER FREQUENCY RESPONSE IN SILICON [J].
GOETZBER.A ;
NICOLLIA.EH .
BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (03) :513-&
[3]  
GOETZBERGER A, 1967, IEEE SOLID STATE DEV
[4]  
GOETZBERGER A, 1966, APPL PHYS LETT, V9, P444
[5]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[6]   PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER [J].
HOFSTEIN, SR ;
WARFIELD, G .
SOLID-STATE ELECTRONICS, 1965, 8 (03) :321-+
[7]  
NICOLLIAN EH, 1967, BELL SYST TECH J, V46, P1053
[8]   EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS [J].
SZE, SM ;
GIBBONS, G .
SOLID-STATE ELECTRONICS, 1966, 9 (09) :831-&
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