INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES

被引：269
作者：
KIMERLING, LC [1 ]
机构：
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 04期
关键词：
D O I：
10.1063/1.1663500
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1839 / 1845
页数：7
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