INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES

被引：269

作者：

KIMERLING, LC ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.1663500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1839 / 1845

页数：7

共 21 条

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[14] CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1767 - +
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +
[16] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
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[17] DEEP TRAP LEVELS OF ION-IMPLANTED GERMANIUM IN SILICON MEASURED BY SCHOTTKY CONTACT TECHNIQUES
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[J]. APPLIED PHYSICS LETTERS, 1973, 23 (01) : 31 - 33
[18] CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS
SENECHAL, RR
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[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4581 - +
[19] CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON
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BASINSKI, J
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 3723 - +
[20] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

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