INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES

被引：269

作者：

KIMERLING, LC ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.1663500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1839 / 1845

页数：7

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