HIGH MOBILITY ELECTRONS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE AND THEIR APPLICATION TO HIGH-SPEED DEVICES

被引:44
作者
HIYAMIZU, S
MIMURA, T
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关键词
D O I
10.1016/0022-0248(82)90465-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:455 / 463
页数:9
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