HIGH MOBILITY ELECTRONS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE AND THEIR APPLICATION TO HIGH-SPEED DEVICES

被引：44
作者：
HIYAMIZU, S
MIMURA, T
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期
关键词：
D O I：
10.1016/0022-0248(82)90465-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：455 / 463
页数：9
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