HIGH MOBILITY ELECTRONS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE AND THEIR APPLICATION TO HIGH-SPEED DEVICES

被引：44
作者：
HIYAMIZU, S
MIMURA, T
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期
关键词：
D O I：
10.1016/0022-0248(82)90465-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：455 / 463
页数：9
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共 24 条
[1]  
ANDO T, COMMUNICATION
[2]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3]   RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J].
CHO, AY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :275-284
[4]   TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J].
DELAGEBEAUDEUF, D ;
DELESCLUSE, P ;
ETIENNE, P ;
LAVIRON, M ;
CHAPLART, J ;
LINH, NT .
ELECTRONICS LETTERS, 1980, 16 (17) :667-668
[5]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[6]   PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J].
EDEN, RC ;
WELCH, BM ;
ZUCCA, R ;
LONG, SI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :299-317
[7]   INTERFACE STUDIES OF ALXGA1-XAS-GAAS HETEROJUNCTIONS [J].
GARNER, CM ;
SU, CY ;
SHEN, YD ;
LEE, CS ;
PEARSON, GL ;
SPICER, WE ;
EDWALL, DD ;
MILLER, D ;
HARRIS, JS .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3383-3389
[8]   ROOM-TEMPERATURE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES [J].
HIYAMIZU, S ;
NANBU, K ;
MIMURA, T ;
FUJII, T ;
HASHIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L378-L380
[9]   EXTREMELY HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE [J].
HIYAMIZU, S ;
MIMURA, T ;
FUJII, T ;
NANBU, K ;
HASHIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L245-L248
[10]   HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE [J].
HIYAMIZU, S ;
MIMURA, T ;
FUJII, T ;
NANB, K .
APPLIED PHYSICS LETTERS, 1980, 37 (09) :805-807
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