DISLOCATION ETCH FOR (100) PLANES IN SILICON

被引：602
作者：
SECCODARAGONA, F
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 07期
关键词：
D O I：
10.1149/1.2404374
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：948 / +
页数：1
相关论文
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[3]  
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[4]   MOUNDS FORMED AT DISLOCATIONS DURING PREFERENTIAL ETCHING OF (100) SILICON SURFACES [J].
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[5]   VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J].
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APPLIED PHYSICS LETTERS, 1970, 16 (03) :100-&
[6]  
SIRTL E, 1961, Z METALLKD, V52, P529
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