共 20 条
- [1] Anistropy of the constant-energy surfaces in n-type Bi2Te3 and Bi2Se3 from galvanomagnetic coefficients [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08): : 3209 - 3220
- [2] ANISOTROPIC GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (11): : 1101 - 1108
- [3] GALVANOMAGNETIC EFFECTS IN P-TYPE BISMUTH TELLURIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (465): : 380 - 390
- [4] EFFECTIVE MASS DEPENDENCE ON CARRIER CONCENTRATION IN BI2SE3 [J]. ZEITSCHRIFT FUR PHYSIK, 1969, 222 (01): : 93 - &
- [7] CONDUCTIVITY TENSOR COMPONENTS OF N-BI2SE3 [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 62 (01): : 57 - 63
- [8] INVESTIGATION OF CONDUCTION-BAND FERMI-SURFACE IN BI2SE3 AT HIGH ELECTRON CONCENTRATIONS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 69 (02): : 349 - 357
- [9] GALVANOMAGNETIC PROPERTIES OF BI2SE3 WITH FREE CARRIER DENSITIES BELOW 5X1017 CM-3 [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02): : 487 - 496
- [10] CONDUCTION-BAND PARAMETERS OF BI2SE3 FROM SHUBNIKOV-DE HAAS INVESTIGATIONS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 58 (01): : 91 - 100