COMPENSATIONAL BORON DOPING AND THE DETERMINATION OF THE MOBILITY GAP OF HYDROGENATED AMORPHOUS-GE

被引：5

作者：

DRUSEDAU, T ^{[1
]}

ANNEN, A ^{[1
]}

FREISTEDT, H ^{[1
]}

SCHRODER, B ^{[1
]}

OECHSNER, H ^{[1
]}

机构：

[1] TECH UNIV OTTO VON GUERICKE,INST EXPTL PHYS,PSF 4120,O-3010 MAGDEBURG,GERMANY

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1992年 / 66卷 / 04期

关键词：

D O I：

10.1080/09500839208219030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The n-type character of nominally undoped hydrogenated amorphous Ge (a-Ge:H) films is clearly demonstrated by the effect of the addition of trimethylborane (CH3)3B to the gas atmosphere of the sputtering preparation process. The minimum conductivity of the fully compensated material was investigated as a function of the H content and used to determine the mobility gap. The mobility gap obtained for sputtered boron-and-carbon-doped a-Ge:H films, which is always smaller than the optical gap (E(T) or E0.4), increases with increasing H content and saturates at 0.95 eV, whereas for glow-discharge films a value of 1.03 eV was found.

引用

页码：175 / 179

页数：5

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