VICINAL SI(111) SURFACES STUDIED BY OPTICAL 2ND-HARMONIC GENERATION - STEP-INDUCED ANISOTROPY AND SURFACE-BULK DISCRIMINATION

被引：75
|
作者：
VANHASSELT, CW
VERHEIJEN, MA
RASING, T
机构：
[1] Research Institute for Materials, University of Nijmegen, NL 6525-ED Nijmegen, Toernooiveld
来源：
PHYSICAL REVIEW B | 1990年 / 42卷 / 14期
关键词：
D O I：
10.1103/PhysRevB.42.9263
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
By modifying a Si(111) surface through the introduction of a variable number of steps, the anisotropic surface and bulk contributions to the optical second-harmonic generation could be determined separately and were found to be of the same order of magnitude for a Si-SiO2 interface. This approach is based on the lowering of the surface symmetry by the steps and by the apparent enhancement of the nonlinear susceptibility at the step edges. © 1990 The American Physical Society.
引用
收藏
页码：9263 / 9266
页数：4
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