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VICINAL SI(111) SURFACES STUDIED BY OPTICAL 2ND-HARMONIC GENERATION - STEP-INDUCED ANISOTROPY AND SURFACE-BULK DISCRIMINATION
被引:75
|
作者
:
VANHASSELT, CW
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Materials, University of Nijmegen, NL 6525-ED Nijmegen, Toernooiveld
VANHASSELT, CW
VERHEIJEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Materials, University of Nijmegen, NL 6525-ED Nijmegen, Toernooiveld
VERHEIJEN, MA
RASING, T
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Materials, University of Nijmegen, NL 6525-ED Nijmegen, Toernooiveld
RASING, T
机构
:
[1]
Research Institute for Materials, University of Nijmegen, NL 6525-ED Nijmegen, Toernooiveld
来源
:
PHYSICAL REVIEW B
|
1990年
/ 42卷
/ 14期
关键词
:
D O I
:
10.1103/PhysRevB.42.9263
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
By modifying a Si(111) surface through the introduction of a variable number of steps, the anisotropic surface and bulk contributions to the optical second-harmonic generation could be determined separately and were found to be of the same order of magnitude for a Si-SiO2 interface. This approach is based on the lowering of the surface symmetry by the steps and by the apparent enhancement of the nonlinear susceptibility at the step edges. © 1990 The American Physical Society.
引用
收藏
页码:9263 / 9266
页数:4
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