ILLUMINATION-INDUCED CHANGE IN THE INTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED BY DEEP CENTERS IN GAAS

被引：0
作者：
VOVNENKO, VI
GLINCHUK, KD
PROKHOROVICH, AV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：165 / 167
页数：3
相关论文
共 50 条
[41]   Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot [J].
Moskalenko, ES ;
Donchev, V ;
Karlsson, KF ;
Holtz, PO ;
Monemar, B ;
Schoenfeld, WV ;
Garcia, JM ;
Petroff, PM .
PHYSICAL REVIEW B, 2003, 68 (15)
[42]   Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots [J].
Leon, R ;
Swift, GM ;
Magness, B ;
Taylor, WA ;
Tang, YS ;
Wang, KL ;
Dowd, P ;
Zhang, YH .
APPLIED PHYSICS LETTERS, 2000, 76 (15) :2074-2076
[43]   Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [J].
Kondratenko, S.V., 1600, American Institute of Physics Inc. (116)
[44]   Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [J].
Kondratenko, S. V. ;
Vakulenko, O. V. ;
Mazur, Yu. I. ;
Dorogan, V. G. ;
Marega, E., Jr. ;
Benamara, M. ;
Ware, M. E. ;
Salamo, G. J. .
JOURNAL OF APPLIED PHYSICS, 2014, 116 (19)
[45]   Internal quantum efficiency measurements of GaInP quantum well laser material using liquid contact luminescence [J].
Hsu, CF ;
Largent, CC ;
O, JS ;
Young, CL ;
Zory, PS ;
Bour, DP .
LASER DIODES AND APPLICATIONS II, 1996, 2682 :136-143
[46]   UP CONVERSION OF LUMINESCENCE VIA DEEP CENTERS IN HIGH-PURITY GAAS AND GAALAS EPITAXIAL LAYERS [J].
QUAGLIANO, LG ;
NATHER, H .
APPLIED PHYSICS LETTERS, 1984, 45 (05) :555-557
[47]   CHANGES IN RECOMBINATION PROPERTIES OF DEEP LUMINESCENCE-CENTERS DUE TO IRRADIATION OF GAAS WITH GAMMA-RAYS [J].
VOVNENKO, VI ;
GLINCHUK, KD ;
LUKAT, K .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09) :1093-1094
[48]   CALCULATION OF FIELD-INDUCED PHONON-ASSISTED TUNNEL IONIZATION OF DEEP CENTERS IN GAAS USING THE QUANTUM DEFECT METHOD [J].
OLEJNIKOVA, B .
CZECHOSLOVAK JOURNAL OF PHYSICS, 1985, 35 (05) :585-588
[49]   Absolute external luminescence quantum efficiency of GaAs/Al0.3Ga0.7As multiple quantum wells [J].
Fleck, T ;
Schmidt, M ;
Klingshirn, C .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 198 (01) :248-254
[50]   EXTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED BY AlGaAs DOUBLE HETEROSTRUCTURES WITH SMOOTH AND DIFFUSELY SCATTERING EMITTING SURFACES. [J].
Garbuzov, D.Z. ;
Tupitskaya, N.A. ;
Agafonov, V.G. ;
Davidyuk, N.Yu. ;
Khalfin, V.B. .
Soviet physics. Semiconductors, 1981, 15 (08) :868-870
12345