A DTA STUDY OF SEMICONDUCTOR-METALLIC TRANSITION TEMPERATURE IN V1-XWX02, O[=X[=O.067

被引：40

作者：

NYGREN, M

ISRAELSSON, M

机构：

[1] Institute of Inorganic and Physical Chemistry University of Stockholm Box 6801

来源：

MATERIALS RESEARCH BULLETIN | 1969年 / 4卷 / 12期

关键词：

D O I：

10.1016/0025-5408(69)90044-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple low-temperature D.T.A. set-up, designed for measurements in the temperature region 120°K - 600°K, is described. The system V1-xWxO2, 0 ≤ x ≤ 0.067, has been studied by means of D.T.A. and X-ray powder diffraction methods. A linear decrease of the transition temperature with increasing x has been observed. © 1969.

引用

页码：881 / +

页数：1

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