GAP VARIATION IN SEMICONDUCTOR ALLOYS AND COHERENT-POTENTIAL APPROXIMATION

被引：35

作者：

CHEN, AB ^{[1
]}

SHER, A ^{[1
]}

机构：

[1] COLL WILLIAM & MARY,DEPT PHYS,WILLIAMSBURG,VA 23185

来源：

PHYSICAL REVIEW LETTERS | 1978年 / 40卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.40.900

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：900 / 903

页数：4

共 18 条

[1]

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[5]

CHEN AB, UNPUBLISHED

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[8]

LEY L, 1973, PHYS REV B, V9, P600

[9] STRUCTURE OF VALENCE BANDS OF ZINCBLENDE-TYPE SEMICONDUCTORS [J].

PANTELIDES, ST ;

HARRISON, WA .

PHYSICAL REVIEW B, 1975, 11 (08) :3006-3021

[10] DENSITIES OF VALENCE STATES OF AMORPHOUS AND CRYSTALLINE III-V AND II-VI SEMICONDUCTORS [J].

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TEJEDA, J ;

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PHYSICAL REVIEW B, 1974, 9 (06) :2627-2648

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