CALCULATION OF SURFACE-CHARGE NOISE AT THE SI-SIO2 INTERFACE

被引:23
作者
GHIBAUDO, G
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 104卷 / 02期
关键词
D O I
10.1002/pssa.2211040247
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:917 / 930
页数:14
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