CALCULATION OF SURFACE-CHARGE NOISE AT THE SI-SIO2 INTERFACE

被引：23
作者：
GHIBAUDO, G
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 104卷 / 02期
关键词：
D O I：
10.1002/pssa.2211040247
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：917 / 930
页数：14
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