GROWTH OF ALUMINUM ANTIMONIDE AND GALLIUM ANTIMONIDE BY MOMBE

被引：0
|
作者：
SHIRALAGI, K [1 ]
TSUI, R [1 ]
CRONK, D [1 ]
KRAMER, G [1 ]
THEODORE, ND [1 ]
机构：
[1] MOTOROLA INC,MAT RES & STRATEG TECHNOL,MESA,AZ 85201
来源：
COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期
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D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth of AlSb and GaSb by MOMBE (utilizing trimethylaminealane and triethylgallium) has been studied. We have explored the effects of temperature and V/III flux ratio on the growth rates using RHEED and cross-sectional TEM studies. Both compounds exhibit a very strong decrease in growth rate with decreasing temperature and/or increasing antimony flux. Conditions under which device quality material can be obtained in the 500 degrees C temperature range will be reported. Results are also compared with those for antimonide growth in MBE acid arsenide growth in CBE to develop a better understanding of the reaction kinetics.
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页码：17 / 22
页数：6
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