GROWTH OF ALUMINUM ANTIMONIDE AND GALLIUM ANTIMONIDE BY MOMBE

The growth of AlSb and GaSb by MOMBE (utilizing trimethylaminealane and triethylgallium) has been studied. We have explored the effects of temperature and V/III flux ratio on the growth rates using RHEED and cross-sectional TEM studies. Both compounds exhibit a very strong decrease in growth rate with decreasing temperature and/or increasing antimony flux. Conditions under which device quality material can be obtained in the 500 degrees C temperature range will be reported. Results are also compared with those for antimonide growth in MBE acid arsenide growth in CBE to develop a better understanding of the reaction kinetics.