GALLIUM-ARSENIDE LARGE-SCALE INTEGRATED-CIRCUITS

被引：3

作者：

LONG, SI

WELCH, BM

ZUCCA, R

EDEN, RC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：531 / 536

页数：6

共 50 条

[1] PERSPECTIVE OF GALLIUM-ARSENIDE INTEGRATED-CIRCUITS
LECAN, C
ACTA ELECTRONICA, 1980, 23 (03): : 191 - 192
[2] INTEGRATED-CIRCUITS - THE CASE FOR GALLIUM-ARSENIDE
EDEN, RC
LIVINGSTON, AR
WELCH, BM
IEEE SPECTRUM, 1983, 20 (12) : 30 - 37
[3] THE BREAKTHROUGH OF GALLIUM-ARSENIDE INTEGRATED-CIRCUITS
KANEL, A
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1985, 40 (229): : 567 - 571
[4] GALLIUM-ARSENIDE DIGITAL INTEGRATED-CIRCUITS
BHATTACHARYA, D
BULLETIN OF MATERIALS SCIENCE, 1990, 13 (1-2) : 135 - 150
[5] GALLIUM-ARSENIDE INTEGRATED-CIRCUITS TECHNOLOGIES
CATHELIN, M
ACTA ELECTRONICA, 1980, 23 (03): : 193 - 204
[6] INTEGRATED-CIRCUITS USING GALLIUM-ARSENIDE
EDEN, RC
LIVINGSTON, AR
WELCH, BM
ELETTROTECNICA, 1984, 71 (07): : 611 - 617
[7] GALLIUM-ARSENIDE - A NEW GENERATION OF INTEGRATED-CIRCUITS
MORGAN, DV
IEE REVIEW, 1988, 34 (08): : 315 - 319
[8] COMPARISON OF SOS AND GALLIUM-ARSENIDE INTEGRATED-CIRCUITS
PHILLIPS, DH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C340 - C341
[9] GALLIUM-ARSENIDE DEPLETION MESFET DIGITAL INTEGRATED-CIRCUITS
MELLOR, PJT
JOURNAL OF THE INSTITUTION OF ELECTRONIC AND RADIO ENGINEERS, 1987, 57 (01): : S23 - S28
[10] PARASITIC EFFECTS AND THEIR IMPACT ON GALLIUM-ARSENIDE INTEGRATED-CIRCUITS
KOYAMA, RY
ODEKIRK, B
VETANEN, WA
FINCHEM, EP
BEERS, IG
SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 203 - 212