HETEROEPITAXIAL GROWTH OF BETA-SIC ON SI(111) BY CVD USING A CH3CL-SIH4-H2 GAS SYSTEM

beta-SiC epitaxial films were grown on Si (111) substrate by a two-step chemical vapor deposition (CVD) method to form a buffer layer (carbonization process) and to grow beta-SiC film using CH3Cl-H2 and CH3Cl-SiH4-H2 gas systems. beta-SiC epitaxial films with a smooth surface were obtained, and the crystallinity and morphology were comparable to those of beta-SiC films grown on Si (100) using a hydrocarbon-SiH4-H2 gas system. The buffer layers of mosaic beta-SiC crystals of 90 nm thickness were formed on Si (111) substrate with the generation of voids in the carbonization process. This result directly indicates the Si out-diffusion mechanism for the formation of the buffer layer in the carbonization process.