DEVELOPMENT OF THE GD(0001) BAND-STRUCTURE WITH FILM THICKNESS

被引：17
作者：
LI, DQ
HUTCHINGS, CW
DOWBEN, PA
WU, RT
HWANG, C
ONELLION, M
ANDREWS, AB
ERSKINE, JL
机构：
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
[2] UNIV TEXAS,AUSTIN,TX 78712
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 10期
关键词：
D O I：
10.1063/1.349858
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By growing gadolinium films on W (110), it has been possible to observe the development of the Gd(0001) band structure with increasing film thickness. The changes in the 5d bands as a result of exposure to oxygen or the development of the valence-band structure with increasing film thickness lead to changes in the 5p multiplet oscillator strengths. These changes are a result of the influence of the band structure upon the final-state effects that give rise to such multiplet structures. This study provides conclusive evidence that there is a 5d contribution to the shallow 5p multiplet photoemission core-level structure.
引用
收藏
页码：6565 / 6567
页数：3
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