A LOW-ENERGY LIMIT TO BORON CHANNELING IN SILICON

被引：12

作者：

LEVER, RF ^{[1
]}

BRANNON, KW ^{[1
]}

机构：

[1] IBM CORP,PALO ALTO SCI CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 09期

关键词：

D O I：

10.1063/1.348838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both experimental profiles and Mone Carlo simulations have shown that a channeling tail is unavoidable in the implantation of boron into silicon at 5 keV, even though high-index channeling does not occur. A model is proposed to explain this disappearance of high-index channeling at low energies, based on simple geometrical considerations of ion deflections predicted by a binary collision potential.

引用

页码：6369 / 6372

页数：4

共 22 条

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