EPITAXIAL GROWTH OF SILICON BY VACUUM SUBLIMATION

被引：25

作者：

HANDELMAN, ET

POVILONIS, EI

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 02期

关键词：

D O I：

10.1149/1.2426083

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：201 / 206

页数：6

共 10 条

[1] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J].

ALLEN, FG ;

EISINGER, J ;

HAGSTRUM, HD ;

LAW, JT .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) :1563-1571

[2] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J].

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1510-1511

[3] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].

BOOKER, GR ;

STICKLER, R .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3281-&

[4]

HALE AF, 1960, 1960 EL DEV M WASH

[5]

KUROV GA, 1957, KRISTALLOGRAFIYA, V2, P59

[6]

KUROV GA, 1961, FIZ TVERD TELA, V3, P1662

[7]

PTUSHINSKII IG, 1959, UKR FIZ ZH, V4, P125

[8] STACKING FAULTS IN EPITAXIAL SILICON [J].

QUEISSER, HJ ;

FINCH, RH ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) :1536-&

[9] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J].

THOMAS, CO ;

KAHNG, D ;

MANZ, RC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) :1055-1061

[10] GERMANIUM FILMS ON GERMANIUM OBTAINED BY THERMAL EVAPORATION IN VACUUM [J].

WEINREICH, O ;

TUFTS, C ;

DERMIT, G .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :1170-&

← 1 →