MEASUREMENT OF NEUTRON ENERGY-DEPENDENCE OF BASE CURRENT DEGRADATION OF A SILICON BIPOLAR-TRANSISTOR

被引：4

作者：

MCKENZIE, JM ^{[1
]}

WITT, LJ ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期

关键词：

D O I：

10.1109/TNS.1973.4327417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：341 / 348

页数：8

共 50 条

[21] COMBINED NEUTRON AND THERMAL EFFECTS ON BIPOLAR-TRANSISTOR GAIN
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