MEASUREMENT OF NEUTRON ENERGY-DEPENDENCE OF BASE CURRENT DEGRADATION OF A SILICON BIPOLAR-TRANSISTOR

被引：4

作者：

MCKENZIE, JM ^{[1
]}

WITT, LJ ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期

关键词：

D O I：

10.1109/TNS.1973.4327417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：341 / 348

页数：8

共 50 条

[1] ENERGY-DEPENDENCE OF NEUTRON DAMAGE IN SILICON BIPOLAR-TRANSISTORS
SPARKS, MH
FLANDERS, TM
WILLIAMS, JG
KELLY, JG
SALLEE, WW
ROKNIZADEH, M
MEASON, JL
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) : 1904 - 1911
[2] MEASUREMENT OF ENERGY-DEPENDENCE OF NEUTRON DAMAGE IN SILICON DEVICES
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MCKENZIE, JM
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2319 - 2325
[3] IMPROVED CURRENT GAIN IN BIPOLAR-TRANSISTOR WITH BANDGAP NARROWING IN BASE
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YAMAZAKI, T
ITO, T
ELECTRONICS LETTERS, 1989, 25 (01) : 60 - 61
[4] CURRENT GAIN OF THE BIPOLAR-TRANSISTOR
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[5] ANALYSIS OF THE PRECISION OF THE EXTRACTION OF THE COMPONENTS OF THE BASE CURRENT FOR A BIPOLAR-TRANSISTOR
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[6] CURRENT GAIN OF SILICON BIPOLAR-TRANSISTOR WITH POLYSILICON EMITTER CONTACT
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[7] MODELING OF AN INVERSION BASE BIPOLAR-TRANSISTOR
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) : 1 - 7
[8] DEPENDENCE OF SILICON-NITRIDE FILM THICKNESS ON BIPOLAR-TRANSISTOR CHARACTERISTICS
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MURASE, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C81 - C81
[9] SILICON-NITRIDE FILM THICKNESS DEPENDENCE ON BIPOLAR-TRANSISTOR CHARACTERISTICS
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1539 - 1545
[10] HOT LUMINESCENCE OF A SILICON BIPOLAR-TRANSISTOR
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KUKHTO, EF
SKLYARCHUK, VM
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1985, 11 (23): : 1437 - 1440

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