MEASUREMENT OF NEUTRON ENERGY-DEPENDENCE OF BASE CURRENT DEGRADATION OF A SILICON BIPOLAR-TRANSISTOR

被引：4

作者：

MCKENZIE, JM ^{[1
]}

WITT, LJ ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

关键词：

D O I：

10.1109/TNS.1973.4327417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：341 / 348

页数：8

共 13 条

[1]

BIGGS F, 1971, SCRR710212 SLA REP

[2]

BIGGS F, TO BE PUBLISHED

[3] TRITIUM TARGET FOR INTENSE NEUTRON SOURCE [J].

BOOTH, R ;

BARSCHALL, HH .

NUCLEAR INSTRUMENTS & METHODS, 1972, 99 (01) :1-+

[4]

COPPAGE FN, 1973, IEEE T NUCL SCI, VNS20, P349

[5]

EWING RE, PRIVATE COMMUNICATIO

[6]

EWING RI, 1973, SLA730184 SAND LAB

[7]

HOLMES RR, 1970, RADIATION EFFECTS IN, V2

[8]

MCKENZIE JM, 1973, IEEE T NUCL SCI, VNS20, P18

[9]

MCKENZIE JM, 1973, SLA735004 SLA REP

[10]

MCKENZIE JM, 1972, SCM720133 SAND LAB