DEEP CENTERS AND ELECTROLUMINESCENCE IN 4H-SIC DIODES WITH A P-TYPE BASE REGION

被引：35
|
作者：
KUZNETSOV, NI [1 ]
ZUBRILOV, AS [1 ]
机构：
[1] CREE RES EED,ST PETERSBURG 194021,RUSSIA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期
关键词：
SILICON CARBIDE; DEFECT FORMATION; LIGHT EMITTING DIODES; ALUMINUM;
D O I：
10.1016/0921-5107(94)04035-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have performed electrical and optical measurements to characterize the processes of radiative recombination of carriers for 4H-SiC p-n(+) junctions. We have detected three levels in the band gap, using capacitance and current deep-level transient spectroscopy, which are responsible for the bands observed in the electroluminescence spectra. We assume that the HK1 center with an activation energy of E(V) + 0.229 eV and a hole capture cross-section of 8 x 10(-13) (300/T)(3) is related to the Al acceptor level.
引用
收藏
页码：181 / 184
页数：4
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