SELF-CONSISTENT CALCULATION OF THE INTRINSIC BISTABILITY IN DOUBLE-BARRIER HETEROSTRUCTURES

被引：14

作者：

PERNAS, PL ^{[1
]}

FLORES, F ^{[1
]}

ANDA, EV ^{[1
]}

机构：

[1] UNIV FED FLUMINENSE,INST FIS,BR-24000 NITEROI,RJ,BRAZIL

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.47.4779

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The intrinsic bistability of double-barrier heterostructures has been analyzed by using the nonequilibrium Keldysh formalism. In this approach, the induced electron charge in the well is calculated as a function of the applied bias and the electrostatic potential induced in the heterostructure. Self-consistency is achieved by relating this induced potential to the electron charge. Detailed results for different AlAs/GaAs/AlAs double barriers have been analyzed and show good agreement with the experimental results. A bistability behavior is found for high dopings.

引用

页码：4779 / 4782

页数：4

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