RANDOM SEQUENTIAL ADSORPTION ON A LINE - MEAN-FIELD THEORY OF DIFFUSIONAL RELAXATION

被引:37
|
作者
PRIVMAN, V
BARMA, M
机构
[1] Department of Physics, Theoretical Physics, University of Oxford, Oxford OX1 3NP
[2] Department of Physics, Clarkson University, Potsdam
[3] Tata Institute of Fundamental Research, Bombay 400005, Homi Bhabha Road
来源
JOURNAL OF CHEMICAL PHYSICS | 1992年 / 97卷 / 09期
关键词
D O I
10.1063/1.463677
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We develop a new fast-diffusion approximation for the kinetics of deposition of extended objects on a linear substrate, accompanied by diffusional relaxation. This new approximation plays the role of the mean-field theory for such processes and is valid over a significantly larger range then an earlier variant, which was based on a mapping to chemical reactions. In particular, continuum-limit off-lattice deposition is described naturally within our approximation. The criteria for the applicability of the mean-field theory are derived. While deposition of dimers, and marginally, trimers, is affected by fluctuations, we find that the k-mer deposition kinetics is asymptotically mean-field-like for all k = 4,5,..., + infinity, where the limit k --> infinity, when properly defined, describes deposition-diffusion kinetics in the continuum.
引用
收藏
页码:6714 / 6719
页数:6
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