EFFECTS OF GROWTH-CONDITIONS ON THE COMPOSITION OF CVT AND PVT GROWN HG1-XCDXTE EPITAXIAL LAYERS

Single crystal epitaxial layers of Hg1-xCdxTe were grown on CdTe substrates employing the chemical and physical va.por transport techniques. Different growth temperatures and various pressures of HgI2 as a transport agent were used while the source materials had compositions of either x = 0.4 or x = 0.6. The epilayers are of nearly uniform composition to a depth of about one-half of the layer thickness. The HgI2 pressure and the growth temperature used for the growth experiments have significant effects on the layer composition. The desired epilayer composition of x = 0.2 can be achieved with either source compositions by properly adjusting the HgI2 pressure and the growth temperature.