TEMPERATURE-DEPENDENCE OF THE ABSORPTION OF MILLIMETER RADIATION IN N-TYPE GERMANIUM

被引:0
作者
SHEKHOVTSOV, NA
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 05期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The absorption of 54-78 GHz radiation in n-type germanium was determined as a function of the injection current in p+-n and n+-n junctions and as a function of temperature. The observed dependences were anomalous for intrinsic germanium and changed from normal to anomalous for near-intrinsic germanium. The anomalous nature of the dependences was attributed to a change in the absorption of radiation by a surface potential barrier on germanium when the concentration of electron-hole pairs in the bulk increased.
引用
收藏
页码:492 / 494
页数:3
相关论文
共 3 条
[1]  
BABENKO SP, 1963, POLUPROVODN PRIB IKH, P404
[2]  
PIKUS GE, 1959, PHYSICS SEMICONDUCTO, P5
[3]  
SHEKHOVTSOV NA, 1987, DOPOV AKAD NAUK A, P55