STRUCTURAL CHARACTERISTICS OF YBA2CU3O7-DELTA FILMS ON ZRO2(100) AND SILICON WITH A ZRO2 BUFFER LAYER

The epitaxial growth of YBa2Cu3O7-delta (YBCO) films on single-crystal ZrO2 (stabilized with Y2O3) and the growth with c axis preferred orientation on single-crystal silicon with a ZrO2 buffer layer were investigated. Films with a high zero resistance temperature T(co)(89 K) and a critical current density J(c) of 2 x 10(6) A cm-2 at 77 K were prepared by d.c. magnetron sputtering on ZrO2(100) single crystal. The T(co) value of YBCO films which were deposited on Si(111) with a ZrO2 buffer layer was 78.5 K. The phase structure of the films was investigated by X-ray diffraction. The Laue patterns of the film on single-crystal ZrO2 deposited at a substrate temperature of 840-degrees-C prove that this film grows epitaxially and the angle between the a axis of the YBCO films and the a axis of ZrO2 is 45-degrees. The films on silicon with a ZrO2 buffer layer are of c axis preferred orientation.