EFFECTS OF NONLINEAR GAIN ON 4-WAVE-MIXING AND ASYMMETRIC GAIN SATURATION IN A SEMICONDUCTOR-LASER AMPLIFIER

被引：80
作者：
TIEMEIJER, LF
机构：
[1] Philips Optoelectronics Centre, 5600 JA Eindhoven
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 05期
关键词：
D O I：
10.1063/1.105419
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nearly degenerate four-wave mixing (NDFWM) and asymmetric gain saturation were studied in a 1.5-mu-m InGaAsP semiconductor laser amplifier at highly saturated conditions (P(out) >> P(sat)) and frequency separations up to 500 GHz. Apart from modulation of the carrier density the data reveal a new mechanism of NDFWM with a characteristic time of about 650 fs which takes over when the frequency separation exceeds 100 GHz.
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页码：499 / 501
页数：3
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