NATIVE-OXIDE-MASKED SI IMPURITY-INDUCED LAYER DISORDERING OF ALXGA1-XAS-ALYGA1-YAS-ALZGA1-ZAS QUANTUM-WELL HETEROSTRUCTURES

被引：7

作者：

ELZEIN, N

HOLONYAK, N

KISH, FA

SUGG, AR

RICHARD, TA

DALLESASSE, JM

SMITH, SC

BURNHAM, RD

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] AMOCO TECHNOL CO,AMOCO RES CTR,NAPERVILLE,IL 60566

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.350354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented showing that the native oxide that can be formed on high A1 composition Al(x)Ga1-xAs (x greater-than-or-similar-to 0.7) confining layers commonly employed on Al(x)Ga1-xAs-Al(y)Ga1-yAs-Al(z)Ga1-zAs (y > z) superlattices or quantum-well heterostructures serves as an effective mask against Si diffusion, and thus impurity-induced layer disordering. The high-quality native oxide is produced by the conversion of high-composition Al(x)Ga1-xAs (x greater-than-or-similar-to 0.7) confining layers via H2O vapor oxidation (greater-than-or-similar-to 400-degrees-C) in N2 carrier gas.

引用

页码：2031 / 2034

页数：4