NATIVE-OXIDE-MASKED SI IMPURITY-INDUCED LAYER DISORDERING OF ALXGA1-XAS-ALYGA1-YAS-ALZGA1-ZAS QUANTUM-WELL HETEROSTRUCTURES

被引：7
作者：
ELZEIN, N
HOLONYAK, N
KISH, FA
SUGG, AR
RICHARD, TA
DALLESASSE, JM
SMITH, SC
BURNHAM, RD
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] AMOCO TECHNOL CO,AMOCO RES CTR,NAPERVILLE,IL 60566
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 04期
关键词：
D O I：
10.1063/1.350354
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Data are presented showing that the native oxide that can be formed on high A1 composition Al(x)Ga1-xAs (x greater-than-or-similar-to 0.7) confining layers commonly employed on Al(x)Ga1-xAs-Al(y)Ga1-yAs-Al(z)Ga1-zAs (y > z) superlattices or quantum-well heterostructures serves as an effective mask against Si diffusion, and thus impurity-induced layer disordering. The high-quality native oxide is produced by the conversion of high-composition Al(x)Ga1-xAs (x greater-than-or-similar-to 0.7) confining layers via H2O vapor oxidation (greater-than-or-similar-to 400-degrees-C) in N2 carrier gas.
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页码：2031 / 2034
页数：4
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