GROWTH-CHARACTERISTICS OF LPE INSB AND INGASB

被引：29
作者：
HOLMES, DE
KAMATH, GS
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 01期
关键词：
D O I：
10.1007/BF02655217
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：95 / 110
页数：16
相关论文
共 27 条
[21]   SURFACE DISLOCATION THEORY OF RECONSTRUCTED CRYSTALS - VPE GAAS [J].
RODE, DL .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02) :425-434
[22]   ISOTHERMAL DIFFUSION-THEORY OF LPE - GAAS, GAP, BUBBLE GARNET [J].
RODE, DL .
JOURNAL OF CRYSTAL GROWTH, 1973, 20 (01) :13-23
[23]   THE OXIDATION OF INTERMETALLIC COMPOUNDS .1. HIGH TEMPERATURE OXIDATION OF INSB [J].
ROSENBERG, AJ ;
LAVINE, MC .
JOURNAL OF PHYSICAL CHEMISTRY, 1960, 64 (09) :1135-1142
[24]   LIQUID-PHASE EPITAXIAL-GROWTH OF INGAAS ON INP [J].
SANKARAN, R ;
MOON, RL ;
ANTYPAS, GA .
JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) :271-280
[25]   GAXIN1-XSB CRYSTALS GROWN BY LIQUID-PHASE EPITAXY [J].
SEGAWA, K ;
OTSUBO, M ;
MIKI, H ;
FUJIBAYASHI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (01) :165-170
[26]  
SMALL NB, 1977, J CRYSTAL GROWTH, V37, P163
[27]  
THOMPSON JP, 1976, THESIS MIT
123