REGULAR COMPOSITIONAL STEPS GENERATED GAAS1-XPX VPE LAYERS

被引：0

作者：

KASANO, H

机构：

来源：

关键词：

D O I：

10.1063/1.328275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4178 / 4185

页数：8

共 50 条

[41] PROPERTIES OF EL2 IN GAAS AND GAAS1-XPX
SAMUELSON, L
PHYSICA B & C, 1984, 127 (1-3): : 104 - 111
[42] STRUCTURAL DEFECTS AND THEIR INFLUENCE ON THE OPTICAL-PROPERTIES OF HETEROEPITAXIAL GAAS1-XPX LAYERS
PINTUS, SM
KRIVOROTOV, EA
SHERSTYAKOVA, AP
INORGANIC MATERIALS, 1979, 15 (03) : 297 - 300
[43] ORGANOMETALLIC EPITAXIAL-GROWTH OF GAAS1-XPX
SAMUELSON, L
OMLING, P
TITZE, H
GRIMMEISS, HG
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 323 - 338
[44] CONDITIONS FOR UNIFORM GROWTH OF GAAS1-XPX SUPERLATTICES
BLAKESLEE, AE
KIBBLER, A
WANLASS, MW
BIEFELD, RM
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1206 - 1208
[45] PROPERTIES OF N ISOELECTRONIC TRAP IN GAAS1-XPX
WOLFORD, DJ
STREETMAN, BG
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (01): : 41 - 41
[46] Resonant Raman scattering in GaAs1-xPx:N
Yu, RW
Zheng, JS
Xiao, MJ
Lin, ZR
Yan, BZ
CHINESE PHYSICS LETTERS, 1996, 13 (01): : 54 - 57
[47] IMPROVED PERFORMANCE OF GAAS1-XPX LASER DIODES
TIETJEN, JJ
OCHS, SA
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02): : 180 - &
[48] GaAs1-xPx光敏器件的试制
薛承永
陆瑞良
传感器技术, 1987, (Z1) : 30 - 30
[49] STUDIES OF PHOTOLUMINESCENCE IN GAAS1-XPX MIXED CRYSTALS
GAJ, JA
MAJERFELD, A
PEARSON, GL
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 48 (02): : 513 - +
[50] DISLOCATIONS AND THEIR EFFECT ON PHOTOLUMINESCENCE EFFICIENCY IN GAAS1-XPX
STRINGFE.GB
GREENE, PE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (09) : 687 - &