IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS

被引：25

作者：

FAVENNEC, PN

HARIDON, HL

机构：

[1] Centre National d'Etudes des Télécommunications

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期

关键词：

D O I：

10.1063/1.91259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zinc and selenium implantations have been performed in Cr-doped semi-insulating GaAs. We show that all zinc and selenium implanted impurities are electrically active after annealing at 900°C. But, in addition to the implantation distribution, there is a distribution induced by the chromium outdiffusion during annealing leading to a Cr-depleted zone, which can become conductive. By taking into account these distributions, the electrical measurements may be explained.

引用

页码：699 / 701

页数：3

共 8 条

[1] FAST AND NONDESTRUCTIVE METHOD OF C(V) PROFILING OF THIN SEMICONDUCTOR LAYERS ON AN INSULATING SUBSTRATE [J].

BINET, M .

ELECTRONICS LETTERS, 1975, 11 (24) :580-581

[2] ELECTRICAL COMPENSATION IN SEMI-INSULATING GALLIUM-ARSENIDE [J].

BROZEL, MR ;

BUTLER, J ;

NEWMAN, RC ;

RITSON, A ;

STIRLAND, DJ ;

WHITEHEAD, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (09) :1857-1863

[3] LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES [J].

DONNELLY, JP ;

BOZLER, CO ;

LINDLEY, WT .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :273-276

[4]

EISEN FH, 1976, ION IMPLANTATION SEM, P97

[5]

EISEN FH, 1978, INT C ION BEAM MODIF

[6] ION-IMPLANTATION OF GROUP-VI IMPURITIES INTO GAAS [J].

FAVENNEC, PN ;

HENRY, L ;

LHARIDON, H .

SOLID-STATE ELECTRONICS, 1978, 21 (05) :705-710

[7]

HENRY L, 1976, VIDE, V183, P101

[8]

HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

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