HIGH-GAIN GAAIAS/GAAS HETEROJUNCTION PHOTOTRANSISTORS

被引：0

作者：

HUANG, XK

SUN, BY

SUN, CC

XUE, BX

ZHANG, PR

机构：

来源：

CHINESE PHYSICS-ENGLISH TR | 1987年 / 7卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：824 / 827

页数：4

共 7 条

[1]

ALFEROV ZI, 1973, SOV PHYS SEMICOND+, V7, P780

[2] MONOLITHIC GAALAS-GAAS INFRARED-TO-VISIBLE WAVELENGTH CONVERTER WITH OPTICAL POWER AMPLIFICATION [J].

BENEKING, H ;

GROTE, N ;

SVILANS, MN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) :404-407

[3]

Beneking H., 1980, International Electron Devices Meeting. Technical Digest

[4] INGAASP INP WAVELENGTH-SELECTIVE HETEROJUNCTION PHOTOTRANSISTORS [J].

MITSUYU, T ;

FUJITA, S ;

SASAKI, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :812-817

[5]

SASKI A, 1982, 14TH P INT C SOL STA

[6] HIGH-GAIN LOW-NOISE GAALAS-GAAS PHOTOTRANSISTORS [J].

SCAVENNEC, A ;

ANKRI, D ;

BESOMBES, C ;

COURBET, C ;

RIOU, J ;

HELIOT, F .

ELECTRONICS LETTERS, 1983, 19 (10) :394-395

[7] SENSITIVE GAALAS-GAAS WIDE-GAP EMITTER PHOTO-TRANSISTOR FOR HIGH-CURRENT APPLICATIONS [J].

SVILANS, MN ;

GROTE, N ;

BENEKING, H .

ELECTRON DEVICE LETTERS, 1980, 1 (12) :247-249

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