DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE AND ELECTRON-NUCLEAR DOUBLE RESONANCE OF ARSENIC- AND ANTIMONY-VACANCY PAIRS

被引:188
作者
ELKIN, EL
WATKINS, GD
机构
来源
PHYSICAL REVIEW | 1968年 / 174卷 / 03期
关键词
D O I
10.1103/PhysRev.174.881
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:881 / &
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[1]   ELECTRIC FIELD GRADIENTS OF ATOMIC PARA-ELECTRONS [J].
BARNES, RG ;
SMITH, WV .
PHYSICAL REVIEW, 1954, 93 (01) :95-98
[2]  
BARUCH P, 1965, 7 P INT C PHYS SE ED, V3, P97
[3]  
BARUCH P, 1965, 7 P INT C SEM PAR ED, V3, P323
[4]  
BARUCH P, 1965, 7 P INT C SEM PAR ED, V3, P335
[5]   DIFFUSION OF NICKEL IN SILICON [J].
BONZEL, HP .
PHYSICA STATUS SOLIDI, 1967, 20 (02) :493-&
[6]  
BURLS J, 1967, SCIENCE TECHNOLOG ED, V1, P1
[7]   DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].
CORBETT, JW ;
WATKINS, GD ;
CHRENKO, RM ;
MCDONALD, RS .
PHYSICAL REVIEW, 1961, 121 (04) :1015-&
[8]   COLOUR CENTRES IN IRRADIATED DIAMONDS .1. [J].
COULSON, CA ;
KEARSLEY, MJ .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1227) :433-454
[9]  
DAS TP, 1958, NUCLEAR QUADRUPOLE R, P17
[10]   HFS ANOMALY OF SB-121 AND SB-123 DETERMINED BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].
EISINGER, J ;
FEHER, G .
PHYSICAL REVIEW, 1958, 109 (04) :1172-1183