THE GROWTH OF CDTE/GAAS HETEROEPITAXIAL FILMS BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：32
作者：
ANDERSON, PL
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期
关键词：
D O I：
10.1116/1.574048
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
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页码：2162 / 2168
页数：7
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共 13 条
[1]  
ANDERSON PL, 1984, P IRIS DETECTOR SPEC
[2]   GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].
BICKNELL, RN ;
YANKA, RW ;
GILES, NC ;
SCHETZINA, JF ;
MAGEE, TJ ;
LEUNG, C ;
KAWAYOSHI, H .
APPLIED PHYSICS LETTERS, 1984, 44 (03) :313-315
[3]   HETEROEPITAXIAL GROWTH OF CDTE ON GAAS BY LASER ASSISTED DEPOSITION [J].
CHEUNG, JT ;
KHOSHNEVISAN, M ;
MAGEE, T .
APPLIED PHYSICS LETTERS, 1983, 43 (05) :462-464
[4]   MBE GROWTH OF (HG, CD, AND TE) COMPOUNDS [J].
CHOW, PP ;
GREENLAW, DK ;
JOHNSON, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :562-563
[5]  
KISKER DW, COMMUNICATION
[6]   MOLECULAR-BEAM EPITAXY OF CD1-XMNXTE [J].
KOLODZIEJSKI, LA ;
SAKAMOTO, T ;
GUNSHOR, RL ;
DATTA, S .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :799-801
[7]   CDTE-FILMS ON (001) GAAS CR BY MOLECULAR-BEAM EPITAXY [J].
MAR, HA ;
CHEE, KT ;
SALANSKY, N .
APPLIED PHYSICS LETTERS, 1984, 44 (02) :237-239
[8]   MOLECULAR-BEAM EPITAXY OF CDTE AND HG1-XCDXTE ON GAAS (100) [J].
NISHITANI, K ;
OHKATA, R ;
MUROTANI, T .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) :619-635
[9]  
OTSUKA N, 1985, APPL PHYS LETT, V46, P861
[10]   GROWTH AND CHARACTERIZATION OF INP USING METALORGANIC CHEMICAL VAPOR-DEPOSITION AT REDUCED PRESSURE [J].
RAZEGHI, M ;
DUCHEMIN, JP .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :76-82
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