ELECTRON TRAP BEHAVIOR IN TE-DOPED GAAS0.6P0.4

被引：19

作者：

HENNING, ID ^{[1
]}

THOMAS, H ^{[1
]}

机构：

[1] UWIST,DEPT PHYS ELECTR & ELECT ENGN,CARDIFF CF1 3NU,S GLAM,WALES

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 04期

关键词：

D O I：

10.1016/0038-1101(82)90142-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：325 / 333

页数：9

共 21 条

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