VOLTAGE-CONTROLLED, REACTIVE PLANAR MAGNETRON SPUTTERING OF AIN THIN-FILMS

被引：71
作者：
MCMAHON, R
AFFINITO, J
PARSONS, RR
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期
关键词：
D O I：
10.1116/1.571470
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：376 / 378
页数：3
相关论文
共 8 条
[1]  
FRASER DB, 1978, THIN FILM PROCESSES, pCH3
[2]   DISCHARGE CHARACTERISTICS FOR MAGNETRON SPUTTERING OF AL IN AR AND AR-O-2 MIXTURES [J].
MANIV, S ;
WESTWOOD, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03) :743-751
[3]   HIGH-RATE DEPOSITION OF TRANSPARENT CONDUCTING FILMS BY MODIFIED REACTIVE PLANAR MAGNETRON SPUTTERING OF CD2SN ALLOY [J].
MANIV, S ;
MINER, C ;
WESTWOOD, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :195-198
[4]  
SCHILLER S, 1979, 1979 P INT C ION PLA
[5]   MAGNETRON SPUTTERING - BASIC PHYSICS AND APPLICATION TO CYLINDRICAL MAGNETRONS [J].
THORNTON, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :171-177
[6]  
THORNTON JA, 1978, THIN FILM PROCESSES, pCH2
[7]   PLANAR MAGNETRON SPUTTERING [J].
WAITS, RK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :179-187
[8]  
WAITS RK, 1978, THIN FILM PROCESSES, pCH2
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