CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS

被引：257

作者：

ASPNES, DE

STUDNA, AA

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期

关键词：

D O I：

10.1063/1.92705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：316 / 318

页数：3

共 16 条

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STUDNA, AA ;

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ASPNES, DE ;

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ASPNES, DE ;

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[7]

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[8]

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[9]

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[10] STUDIES OF CDTE SURFACES WITH SECONDARY ION MASS-SPECTROMETRY, RUTHERFORD BACKSCATTERING AND ELLIPSOMETRY [J].

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APPLIED PHYSICS, 1979, 19 (01) :25-33

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