STACKING FAULT ENERGY IN SILICON

被引:182
作者
AERTS, E
SIEMS, R
DELAVIGNETTE, P
AMELINCKX, S
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D O I
10.1063/1.1728570
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O59 [应用物理学];
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页码:3078 / &
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共 10 条
[1]   ANISOTROPIC ELASTICITY WITH APPLICATIONS TO DISLOCATION THEORY [J].
ESHELBY, JD ;
READ, WT ;
SHOCKLEY, W .
ACTA METALLURGICA, 1953, 1 (03) :251-259
[2]   DISLOCATION ENERGIES IN ANISOTROPIC CRYSTALS [J].
FOREMAN, AJE .
ACTA METALLURGICA, 1955, 3 (04) :322-330
[3]  
GEACH GA, 1957, PHILIPS RESEARCH, V10, P411
[4]  
GRAY DE, 1957, AM I PHYSICS HDB
[5]  
HAASEN P, 1958, HALBLEITERPROBLEME, V4, P68
[6]  
HORNSTRA J, 1958, PHYS CHEM SOLIDS, V5, P129
[7]   STACKING FAULTS IN EPITAXIAL SILICON [J].
QUEISSER, HJ ;
FINCH, RH ;
WASHBURN, J .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) :1536-&
[8]   GELL THE SPLITTING OF DISLOCATIONS IN METALS WITH CLOSE-PACKED LATTICES [J].
SEEGER, A ;
SCHOCK, G .
ACTA METALLURGICA, 1953, 1 (05) :519-530
[9]   DIE DIREKTE MESSUNG VON STAPELFEHLERENERGIEN [J].
SIEMS, R ;
DELAVIGNETTE, P ;
AMELINCKX, S .
ZEITSCHRIFT FUR PHYSIK, 1961, 165 (05) :502-&
[10]  
WHELAN MJ, 1958, P ROY SOC, VA249, P114